Technische Details BSS131E6327 Infineon
Description: MOSFET N-CH 240V 110MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V, Drain to Source Voltage (Vdss): 240 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Vgs(th) (Max) @ Id: 1.8V @ 56µA, Power Dissipation (Max): 360mW (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 110mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BSS131E6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
BSS131E6327 | Infineon Technologies |
 Description: MOSFET N-CH 240V 110MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-SOT23 Vgs(th) (Max) @ Id: 1.8V @ 56µA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSS131 E6327 | Infineon Technologies |
MOSFETs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSS131E6327 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 110MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 240V 110MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS131 E6327 |
|
Hersteller: Infineon Technologies
MOSFETs
MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH