BSS138-7 Diodes Incorporated

Description: MOSFET N-CH 50V 200MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 300mW (Ta), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).