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Technische Details BSS138AKAR Nexperia
Description: MOSFET N-CH 60V 200MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, Power Dissipation (Max): 300mW (Ta), 1.06W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250mA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSS138AKAR nach Preis ab 0.057 EUR bis 0.39 EUR
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BSS138AKAR | Nexperia |
 Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | Nexperia |
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250mA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKAR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250mA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKAR | NEXPERIA |
Description: NEXPERIA - BSS138AKAR - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 2.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85423990 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 1.2V Verlustleistung: 360mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2.7ohm |
auf Bestellung 12940 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSS138AKAR |
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Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.057 EUR |
| BSS138AKAR |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12000+ | 0.073 EUR |
| BSS138AKAR |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250mA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250mA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.081 EUR |
| 6000+ | 0.072 EUR |
| BSS138AKAR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250mA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250mA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 73+ | 0.24 EUR |
| 118+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.097 EUR |
| BSS138AKAR |
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Hersteller: NEXPERIA
Description: NEXPERIA - BSS138AKAR - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 2.7 ohm, SOT-23, Oberflächenmontage
tariffCode: 85423990
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 1.2V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2.7ohm
Description: NEXPERIA - BSS138AKAR - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 2.7 ohm, SOT-23, Oberflächenmontage
tariffCode: 85423990
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 1.2V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2.7ohm
auf Bestellung 12940 Stücke:
Lieferzeit 14-21 Tag (e)