| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.52 EUR |
| 14+ | 0.23 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 3000+ | 0.1 EUR |
Artikel auf Bestellung
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10-14 Tag (e)
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Technische Details BSS138AKS-QX Nexperia
Description: NEXPERIA - BSS138AKS-QX - Dual-MOSFET, Zweifach n-Kanal, 60 V, 220 mA, 3 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: -, Dauer-Drainstrom Id, n-Kanal: 220mA, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 60V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 1.3W, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote BSS138AKS-QX nach Preis ab 0.15 EUR bis 0.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BSS138AKS-QX | Nexperia USA Inc. |
 Description: MOS DISCRETESPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW (Ta), 1.3W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 622 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSS138AKS-QX |
|
Hersteller: Nexperia USA Inc.
Description: MOS DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta), 1.3W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOS DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta), 1.3W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 315pC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 63+ | 0.33 EUR |
| 88+ | 0.24 EUR |
| 102+ | 0.2 EUR |
| 500+ | 0.15 EUR |