Weitere Produktangebote BSS138N nach Preis ab 0.12 EUR bis 0.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BSS138N | Analog Power Inc. |
 Description: DIODE SIL SIC 60V 0.6A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.75V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSS138N | Infineon Technologies |
N-канальний ПТ, Udss, В = 60, Id = 230 мА, Ciss, пФ @ Uds, В = 41 @ 25, Qg, нКл = 1.4 @ 10 В, Rds = 3.5 Ом @ 230 мА, 10 В, Ugs(th) = 1.4 В @ 250 мкА, Р, Вт = 0,36, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 2 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| BSS138N |
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Hersteller: Analog Power Inc.
Description: DIODE SIL SIC 60V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
Description: DIODE SIL SIC 60V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.12 EUR |
| BSS138N |
|
Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 60, Id = 230 мА, Ciss, пФ @ Uds, В = 41 @ 25, Qg, нКл = 1.4 @ 10 В, Rds = 3.5 Ом @ 230 мА, 10 В, Ugs(th) = 1.4 В @ 250 мкА, Р, Вт = 0,36, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
N-канальний ПТ, Udss, В = 60, Id = 230 мА, Ciss, пФ @ Uds, В = 41 @ 25, Qg, нКл = 1.4 @ 10 В, Rds = 3.5 Ом @ 230 мА, 10 В, Ugs(th) = 1.4 В @ 250 мкА, Р, Вт = 0,36, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 2 Stücke: