BSS139 E6906 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1V @ 56µA
Power Dissipation (Max): 360mW (Ta)
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Technische Details BSS139 E6906 Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3, Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Vgs(th) (Max) @ Id: 1V @ 56µA, Power Dissipation (Max): 360mW (Ta).
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BSS139 E6906 | Infineon Technologies |
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Hersteller: Infineon Technologies
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

