BSS159N E6906 Infineon Technologies


BSS159N.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSS159N E6906 Infineon Technologies

Description: MOSFET N-CH 60V 230MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 26µA, Supplier Device Package: PG-SOT23, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BSS159N E6906

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSS159N E6906 Infineon Technologies BSS159N.pdf Infineon
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS159N E6906 BSS159N.pdf
Hersteller: Infineon Technologies
Infineon
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH