BSS169 E6906 Infineon Technologies

Description: MOSFET N-CH 100V 170MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Vgs(th) (Max) @ Id: 1.8V @ 50µA, Power Dissipation (Max): 360mW (Ta), FET Feature: Depletion Mode, Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).