BSS192PE6327 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSS192PE6327 - BSS192 - SMALL SIGNAL N-CHANNEL MOSFET
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BSS192PE6327 ROCHESTER ELECTRONICS
Description: MOSFET P-CH 250V 190MA SOT89, Qualification: AEC-Q101, Grade: Automotive, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Supplier Device Package: PG-SOT89, Vgs(th) (Max) @ Id: 2V @ 130µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V.
Weitere Produktangebote BSS192PE6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BSS192PE6327 | Infineon Technologies |
Description: MOSFET P-CH 250V 190MA SOT89 Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Supplier Device Package: PG-SOT89 Vgs(th) (Max) @ Id: 2V @ 130µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Drain to Source Voltage (Vdss): 250 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSS192PE6327 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 190MA SOT89
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Description: MOSFET P-CH 250V 190MA SOT89
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH