BSS214NWH6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 55+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
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Technische Details BSS214NWH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 3.7µA, Supplier Device Package: PG-SOT323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote BSS214NWH6327XTSA1 nach Preis ab 0.088 EUR bis 0.67 EUR
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BSS214NWH6327XTSA1 | Infineon Technologies |
MOSFETs N-Ch 20V 1.5A SOT-323-3 |
auf Bestellung 10578 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS214NWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323 Mounting: SMD Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W On-state resistance: 0.25Ω Gate-source voltage: ±12V Polarisation: unipolar Case: SOT323 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 2 |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BSS214NWH6327XTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 20V 1.5A SOT-323-3
MOSFETs N-Ch 20V 1.5A SOT-323-3
auf Bestellung 10578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.088 EUR |
| BSS214NWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
On-state resistance: 0.25Ω
Gate-source voltage: ±12V
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
On-state resistance: 0.25Ω
Gate-source voltage: ±12V
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 106+ | 0.67 EUR |