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BSS215PH6327XTSA1 Infineon Technologies


BSS215P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f6860601311833f57144fb
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
6000+0.12 EUR
15000+0.11 EUR
21000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSS215PH6327XTSA1 Infineon Technologies

Description: MOSFET P-CH 20V 1.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 11µA, Supplier Device Package: PG-SOT23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BSS215PH6327XTSA1 nach Preis ab 0.12 EUR bis 0.68 EUR

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BSS215PH6327XTSA1 BSS215PH6327XTSA1 INFINEON TECHNOLOGIES BSS215PH6327-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Gate-source voltage: ±12V
Kind of channel: enhancement
Case: PG-SOT23
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.15Ω
Polarisation: unipolar
Power dissipation: 0.5W
auf Bestellung 1234 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
214+0.33 EUR
317+0.23 EUR
374+0.19 EUR
532+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 152 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS215PH6327XTSA1 BSS215PH6327XTSA1 Infineon Technologies BSS215P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f6860601311833f57144fb Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 48037 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS215PH6327XTSA1 BSS215PH6327XTSA1 Infineon Technologies Infineon-BSS215P-DS-v02_03-en.pdf MOSFETs P-Ch -20V -1.5A SOT-23-3
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.68 EUR
10+0.42 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS215PH6327XTSA1 BSS215PH6327-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Gate-source voltage: ±12V
Kind of channel: enhancement
Case: PG-SOT23
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.15Ω
Polarisation: unipolar
Power dissipation: 0.5W
auf Bestellung 1234 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
152+0.47 EUR
214+0.33 EUR
317+0.23 EUR
374+0.19 EUR
532+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 152 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS215PH6327XTSA1 BSS215P_Rev2.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304330f6860601311833f57144fb
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 48037 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
29+0.62 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS215PH6327XTSA1 Infineon-BSS215P-DS-v02_03-en.pdf
Hersteller: Infineon Technologies
MOSFETs P-Ch -20V -1.5A SOT-23-3
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+0.68 EUR
10+0.42 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH