Technische Details BSS84-7 DIODES
Description: MOSFET P-CH 50V 130MA SOT23-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Discontinued at Digi-Key, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 300mW (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Current - Continuous Drain (Id) @ 25°C: 130mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V.
Weitere Produktangebote BSS84-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSS84-7 | Diodes Incorporated |
 Description: MOSFET P-CH 50V 130MA SOT23-3Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Discontinued at Digi-Key Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSS84-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 130MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Discontinued at Digi-Key Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSS84-7 | Diodes Incorporated |
MOSFETs -50V 250mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSS84-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Description: MOSFET P-CH 50V 130MA SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSS84-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 50V 130MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS84-7 |
|
Hersteller: Diodes Incorporated
MOSFETs -50V 250mW
MOSFETs -50V 250mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH