BSS84-G ON Semiconductor

Description: FET -50V 10.0 MOHM SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 130mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2V @ 34µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V.