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BSS8402DWQ-13

BSS8402DWQ-13 DIODES INCORPORATED

BSS8402DW-7-F.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-50V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-50V
Drain current: 0.115/-0.13A
Power dissipation: 0.2W
Gate-source voltage: ±20V
On-state resistance: 10/13.5Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT363
Polarisation: unipolar
Kind of transistor: complementary pair
Application: automotive industry
Kind of package: 13 inch reel; tape
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Technische Details BSS8402DWQ-13 DIODES INCORPORATED

Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-50V, Type of transistor: N/P-MOSFET, Drain-source voltage: 60/-50V, Drain current: 0.115/-0.13A, Power dissipation: 0.2W, Gate-source voltage: ±20V, On-state resistance: 10/13.5Ω, Mounting: SMD, Kind of channel: enhancement, Case: SOT363, Polarisation: unipolar, Kind of transistor: complementary pair, Application: automotive industry, Kind of package: 13 inch reel; tape.