BSS8402DWQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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Technische Details BSS8402DWQ-7 Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 60V, 50V, Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V, Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote BSS8402DWQ-7 nach Preis ab 0.27 EUR bis 1.34 EUR
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BSS8402DWQ-7 | Diodes Incorporated |
MOSFETs BSS Family SOT363 T&R 3K |
auf Bestellung 3211 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS8402DWQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V/50V SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 3599 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSS8402DWQ-7 |
|
Hersteller: Diodes Incorporated
MOSFETs BSS Family SOT363 T&R 3K
MOSFETs BSS Family SOT363 T&R 3K
auf Bestellung 3211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.32 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.27 EUR |
| BSS8402DWQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3599 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.34 EUR |
| 26+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |