Produkte > DIODES INCORPORATED > BSS8402DWQ-7

BSS8402DWQ-7 Diodes Incorporated


ds30380.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSS8402DWQ-7 Diodes Incorporated

Description: MOSFET N/P-CH 60V/50V SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 60V, 50V, Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V, Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.

Weitere Produktangebote BSS8402DWQ-7 nach Preis ab 0.23 EUR bis 1.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSS8402DWQ-7 BSS8402DWQ-7 Diodes Incorporated ds30380.pdf Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3662 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS8402DWQ-7 BSS8402DWQ-7 Diodes Incorporated ds30380.pdf MOSFETs BSS Family SOT363 T&R 3K
auf Bestellung 3211 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.11 EUR
10+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
3000+0.26 EUR
6000+0.23 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS8402DWQ-7 ds30380.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3662 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS8402DWQ-7 ds30380.pdf
Hersteller: Diodes Incorporated
MOSFETs BSS Family SOT363 T&R 3K
auf Bestellung 3211 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.11 EUR
10+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
3000+0.26 EUR
6000+0.23 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH