BSS84 ON
Produktcode: 10019
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Lieblingsprodukt
Hersteller: ON
Gehäuse: SOT-23
Uds,V: 50
Id,A: 0.13
Rds(on),Om: 10
Ciss, pF/Qg, nC: 40/
/: SMD
Produktrezensionen
Produktbewertung abgeben
Möglichen Substitutionen BSS84 ON
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BSS84 Produktcode: 187507
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zu Favoriten hinzufügen
Lieblingsprodukt
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UMW |
Transistoren > Transistoren P-Kanal-FeldGehäuse: SOT-23 Uds,V: 50 V Id,A: 0,13 A /: SMD |
auf Bestellung 2687 St.: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSS84 Produktcode: 187507
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zu Favoriten hinzufügen
Lieblingsprodukt
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auf Bestellung 2687 St.:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
Weitere Produktangebote BSS84 nach Preis ab 0.018 EUR bis 1.25 EUR
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BSS84 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.13A, -5Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 225mW Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | MERRY |
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -50°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 MERRY TBSS84 MERAnzahl je Verpackung: 3000 Stücke |
auf Bestellung 5997 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 50V 130MA 10@5V,100MA 200MW 2.5VPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10Ohm @ 10mA, 5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | HT SEMI |
Transistor P-MOSFET; -60V; 20V; 10Ohm; -130mA; 225mW; -55°C~150°C; Similar to: BSS84-7-F; BSS84 SOT23 HT SEMI TBSS84 HTSEMIAnzahl je Verpackung: 3000 Stücke |
auf Bestellung 2300 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | LGE |
Tranzystor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -55°C ~ 150°C; BSS84 SOT23 LGE TBSS84 LGEAnzahl je Verpackung: 3000 Stücke |
auf Bestellung 11987 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | YY |
Transistor P-MOSFET; 60V; 20V; 9,9Ohm; 170mA; 350mW; -55°C ~ 150°C; Replacement: BSS84-F2-0000HF; BSS84 TBSS84 YYAnzahl je Verpackung: 3000 Stücke |
auf Bestellung 900 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | JSMicro Semiconductor |
Transistor P-Channel MOSFET; 50V; 20V; 6Ohm; 130mA; 350mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 JSMICRO TBSS84 JSMAnzahl je Verpackung: 500 Stücke |
auf Bestellung 2997 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | YFW |
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 cAnzahl je Verpackung: 3000 Stücke |
auf Bestellung 380 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | YFW |
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 cAnzahl je Verpackung: 3000 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | YFW |
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 cAnzahl je Verpackung: 3000 Stücke |
auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | Createk Microelectronics |
Transistor P-Channel MOSFET; 50V; 20V; 2Ohm; 200mA; 720mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 CREATEK TBSS84 CREAnzahl je Verpackung: 500 Stücke |
auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | REALCHIP |
Tranzystor P-Channel MOSFET; 50V; 20V; 17Ohm; 130mA; 360mW; -55°C ~ 150°C; Similar to: BSS84AK,215; BSS84 SOT23 REALCHIP TBSS84 REAAnzahl je Verpackung: 3000 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | SLKOR |
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 200mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SLKOR TBSS84 SLKAnzahl je Verpackung: 500 Stücke |
auf Bestellung 1580 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | SLKOR |
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 200mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SLKOR TBSS84 SLKAnzahl je Verpackung: 500 Stücke |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | GALAXY |
Transistor P-Channel MOSFET; 50V; 12V; 10Ohm; 130mA; 360mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 GALAXY TBSS84 GALAnzahl je Verpackung: 500 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | SHIKUES |
Transistor P-Channel MOSFET; 60V; 20V; 6Ohm; 130mA; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SHIKUES TBSS84 SHKAnzahl je Verpackung: 500 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: P-CHANNEL ENHANCEMENT MODE MOSFEPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | HXY MOSFET |
Transistor P-Channel MOSFET; 50V; 20V; 6Ohm; 130mA; 350mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 HXY MOSFET TBSS84 HXYAnzahl je Verpackung: 500 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | UMW |
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 300mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 UMW TBSS84 UMWAnzahl je Verpackung: 500 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | AnBon |
Transistor P-Channel MOSFET; 50V; +/-20V; 10Ohm; 130mA; 225mW; -55°C~150°C; BSS84P TBSS84p ANBAnzahl je Verpackung: 500 Stücke |
auf Bestellung 216 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | AnBon |
Transistor P-Channel MOSFET; 50V; +/-20V; 10Ohm; 130mA; 225mW; -55°C~150°C; BSS84P TBSS84p ANBAnzahl je Verpackung: 500 Stücke |
auf Bestellung 1684 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | UMW |
Description: 50V 130MA 300MW 10R@5V,100MA 2V@Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 156000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 156000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | MDD |
Description: MOSFET SOT-23 P Channel 50VPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V |
auf Bestellung 231000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 26486 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | onsemi |
Description: MOSFET P-CH 50V 130MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
auf Bestellung 11905 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.13A, -5Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 225mW Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V |
auf Bestellung 1902 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | ON-Semiconductor |
Transistor P-Channel MOSFET; 50V; 20V; 17Ohm; 130mA; 360mW; -55°C ~ 150°C; Replacement: BSS84; BSS84LT1G; BSS84LT7G; BSS84-FAI; BSS84LT1G TBSS84Anzahl je Verpackung: 100 Stücke |
auf Bestellung 174 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 114000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 50V 130MA 10@5V,100MA 200MW 2.5VPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10Ohm @ 10mA, 5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
auf Bestellung 468 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | UMW |
Description: 50V 130MA 300MW 10R@5V,100MA 2V@Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
auf Bestellung 1028 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | EVVO |
Description: MOSFET P-CH 50V 130MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23 |
auf Bestellung 4799 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: P-CHANNEL ENHANCEMENT MODE MOSFEPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V |
auf Bestellung 1824 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.3nC |
auf Bestellung 18981 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 26486 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 8397 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84 | onsemi |
Description: MOSFET P-CH 50V 130MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
auf Bestellung 13266 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | onsemi |
MOSFETs SOT-23 P-CH ENHANCE |
auf Bestellung 261797 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | Analog Power Inc. |
Description: MOSFET P-CH 50V 0.3A SOT-23Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84 | ONSEMI |
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, OberflächenmontagetariffCode: 85423990 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 130mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 360mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 5V Drain-Source-Durchgangswiderstand: 10ohm |
auf Bestellung 17038 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BSS84 | ON Semiconductor |
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BSS84 | ONSEMI |
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, OberflächenmontagetariffCode: 85423990 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 130mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 360mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 5V Drain-Source-Durchgangswiderstand: 10ohm |
auf Bestellung 17038 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BSS84 | ONSEMI |
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, OberflächenmontagetariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 130mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 360mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 5V Drain-Source-Durchgangswiderstand: 10ohm |
auf Bestellung 252000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| BSS84 | HT Jinyu Semiconductor |
P-Channel Enhancement Mode MOSFET |
auf Bestellung 114000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSS84 | Fairchild/ON Semiconductor |
P-канальний ПТ, Udss, В = 50, Id = 130 мА, Ptot, Вт = 0,36, Тип монт. = smd, Ciss, пФ @ Uds, В = 73 @ 25, Qg, нКл = 1,3 @ 5 В, Rds = 10 Ом @ 100 мА, 5 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 1 мА,... Транзистори Корпус: SOT-23 Од. вим: штAnzahl je Verpackung: 3000 Stücke |
verfügbar 1475 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| BSS84 |
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Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.13A, -5
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V
Description: MOSFET, P-CH, SINGLE, -0.13A, -5
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.025 EUR |
| 6000+ | 0.024 EUR |
| BSS84 |
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Hersteller: MERRY
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -50°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 MERRY TBSS84 MER
Anzahl je Verpackung: 3000 Stücke
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -50°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 MERRY TBSS84 MER
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 5997 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.031 EUR |
| BSS84 |
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Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 50V 130MA 10@5V,100MA 200MW 2.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA
Rds On (Max) @ Id, Vgs: 10Ohm @ 10mA, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: 50V 130MA 10@5V,100MA 200MW 2.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA
Rds On (Max) @ Id, Vgs: 10Ohm @ 10mA, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 6000+ | 0.031 EUR |
| 9000+ | 0.029 EUR |
| 15000+ | 0.027 EUR |
| 21000+ | 0.025 EUR |
| BSS84 |
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Hersteller: HT SEMI
Transistor P-MOSFET; -60V; 20V; 10Ohm; -130mA; 225mW; -55°C~150°C; Similar to: BSS84-7-F; BSS84 SOT23 HT SEMI TBSS84 HTSEMI
Anzahl je Verpackung: 3000 Stücke
Transistor P-MOSFET; -60V; 20V; 10Ohm; -130mA; 225mW; -55°C~150°C; Similar to: BSS84-7-F; BSS84 SOT23 HT SEMI TBSS84 HTSEMI
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 2300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.039 EUR |
| BSS84 |
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Hersteller: LGE
Tranzystor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -55°C ~ 150°C; BSS84 SOT23 LGE TBSS84 LGE
Anzahl je Verpackung: 3000 Stücke
Tranzystor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -55°C ~ 150°C; BSS84 SOT23 LGE TBSS84 LGE
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 11987 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.04 EUR |
| BSS84 |
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Hersteller: YY
Transistor P-MOSFET; 60V; 20V; 9,9Ohm; 170mA; 350mW; -55°C ~ 150°C; Replacement: BSS84-F2-0000HF; BSS84 TBSS84 YY
Anzahl je Verpackung: 3000 Stücke
Transistor P-MOSFET; 60V; 20V; 9,9Ohm; 170mA; 350mW; -55°C ~ 150°C; Replacement: BSS84-F2-0000HF; BSS84 TBSS84 YY
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.041 EUR |
| BSS84 |
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Hersteller: JSMicro Semiconductor
Transistor P-Channel MOSFET; 50V; 20V; 6Ohm; 130mA; 350mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 JSMICRO TBSS84 JSM
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; 20V; 6Ohm; 130mA; 350mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 JSMICRO TBSS84 JSM
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2997 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.041 EUR |
| BSS84 |
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Hersteller: YFW
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 c
Anzahl je Verpackung: 3000 Stücke
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 c
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| BSS84 |
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Hersteller: YFW
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 c
Anzahl je Verpackung: 3000 Stücke
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 c
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| BSS84 |
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Hersteller: YFW
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 c
Anzahl je Verpackung: 3000 Stücke
Transistor P-MOSFET; 60V; 20V; 10Ohm; 150mA; 357mW; -55°C ~ 150°C; Substitute: BSS84-7-F; BSS84 _R1 _00001; BSS84 TBSS84 c
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| BSS84 |
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Hersteller: Createk Microelectronics
Transistor P-Channel MOSFET; 50V; 20V; 2Ohm; 200mA; 720mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 CREATEK TBSS84 CRE
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; 20V; 2Ohm; 200mA; 720mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 CREATEK TBSS84 CRE
Anzahl je Verpackung: 500 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.043 EUR |
| BSS84 |
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Hersteller: REALCHIP
Tranzystor P-Channel MOSFET; 50V; 20V; 17Ohm; 130mA; 360mW; -55°C ~ 150°C; Similar to: BSS84AK,215; BSS84 SOT23 REALCHIP TBSS84 REA
Anzahl je Verpackung: 3000 Stücke
Tranzystor P-Channel MOSFET; 50V; 20V; 17Ohm; 130mA; 360mW; -55°C ~ 150°C; Similar to: BSS84AK,215; BSS84 SOT23 REALCHIP TBSS84 REA
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.045 EUR |
| BSS84 |
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Hersteller: SLKOR
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 200mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SLKOR TBSS84 SLK
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 200mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SLKOR TBSS84 SLK
Anzahl je Verpackung: 500 Stücke
auf Bestellung 1580 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.046 EUR |
| BSS84 |
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Hersteller: SLKOR
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 200mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SLKOR TBSS84 SLK
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 200mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SLKOR TBSS84 SLK
Anzahl je Verpackung: 500 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.046 EUR |
| BSS84 |
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Hersteller: GALAXY
Transistor P-Channel MOSFET; 50V; 12V; 10Ohm; 130mA; 360mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 GALAXY TBSS84 GAL
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; 12V; 10Ohm; 130mA; 360mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 GALAXY TBSS84 GAL
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.05 EUR |
| BSS84 |
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Hersteller: SHIKUES
Transistor P-Channel MOSFET; 60V; 20V; 6Ohm; 130mA; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SHIKUES TBSS84 SHK
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 60V; 20V; 6Ohm; 130mA; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 SHIKUES TBSS84 SHK
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.051 EUR |
| BSS84 |
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Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.052 EUR |
| 6000+ | 0.047 EUR |
| 9000+ | 0.044 EUR |
| 15000+ | 0.04 EUR |
| 21000+ | 0.038 EUR |
| 30000+ | 0.036 EUR |
| BSS84 |
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Hersteller: HXY MOSFET
Transistor P-Channel MOSFET; 50V; 20V; 6Ohm; 130mA; 350mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 HXY MOSFET TBSS84 HXY
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; 20V; 6Ohm; 130mA; 350mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 HXY MOSFET TBSS84 HXY
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.054 EUR |
| BSS84 |
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Hersteller: UMW
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 300mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 UMW TBSS84 UMW
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 300mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP; BSS84 UMW TBSS84 UMW
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.057 EUR |
| BSS84 |
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Hersteller: AnBon
Transistor P-Channel MOSFET; 50V; +/-20V; 10Ohm; 130mA; 225mW; -55°C~150°C; BSS84P TBSS84p ANB
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; +/-20V; 10Ohm; 130mA; 225mW; -55°C~150°C; BSS84P TBSS84p ANB
Anzahl je Verpackung: 500 Stücke
auf Bestellung 216 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.061 EUR |
| BSS84 |
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Hersteller: AnBon
Transistor P-Channel MOSFET; 50V; +/-20V; 10Ohm; 130mA; 225mW; -55°C~150°C; BSS84P TBSS84p ANB
Anzahl je Verpackung: 500 Stücke
Transistor P-Channel MOSFET; 50V; +/-20V; 10Ohm; 130mA; 225mW; -55°C~150°C; BSS84P TBSS84p ANB
Anzahl je Verpackung: 500 Stücke
auf Bestellung 1684 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.061 EUR |
| BSS84 |
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Hersteller: UMW
Description: 50V 130MA 300MW 10R@5V,100MA 2V@
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Description: 50V 130MA 300MW 10R@5V,100MA 2V@
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.064 EUR |
| BSS84 |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 84000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.074 EUR |
| 6000+ | 0.056 EUR |
| BSS84 |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 84000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.074 EUR |
| 6000+ | 0.055 EUR |
| BSS84 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 156000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.078 EUR |
| 6000+ | 0.06 EUR |
| BSS84 |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 156000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.078 EUR |
| 6000+ | 0.061 EUR |
| BSS84 |
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Hersteller: MDD
Description: MOSFET SOT-23 P Channel 50V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V
Description: MOSFET SOT-23 P Channel 50V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V
auf Bestellung 231000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12000+ | 0.089 EUR |
| BSS84 |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 26486 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1315+ | 0.11 EUR |
| 1382+ | 0.1 EUR |
| 1454+ | 0.096 EUR |
| 1537+ | 0.089 EUR |
| 3000+ | 0.083 EUR |
| 6000+ | 0.076 EUR |
| 15000+ | 0.07 EUR |
| BSS84 |
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Hersteller: onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 11905 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| BSS84 |
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Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.13A, -5
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V
Description: MOSFET, P-CH, SINGLE, -0.13A, -5
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V
auf Bestellung 1902 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.14 EUR |
| 371+ | 0.048 EUR |
| 424+ | 0.042 EUR |
| 511+ | 0.034 EUR |
| 567+ | 0.031 EUR |
| 608+ | 0.029 EUR |
| 1000+ | 0.027 EUR |
| BSS84 |
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Hersteller: ON-Semiconductor
Transistor P-Channel MOSFET; 50V; 20V; 17Ohm; 130mA; 360mW; -55°C ~ 150°C; Replacement: BSS84; BSS84LT1G; BSS84LT7G; BSS84-FAI; BSS84LT1G TBSS84
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 50V; 20V; 17Ohm; 130mA; 360mW; -55°C ~ 150°C; Replacement: BSS84; BSS84LT1G; BSS84LT7G; BSS84-FAI; BSS84LT1G TBSS84
Anzahl je Verpackung: 100 Stücke
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.14 EUR |
| BSS84 |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 114000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| 9000+ | 0.16 EUR |
| 27000+ | 0.15 EUR |
| BSS84 |
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Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 50V 130MA 10@5V,100MA 200MW 2.5V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA
Rds On (Max) @ Id, Vgs: 10Ohm @ 10mA, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: 50V 130MA 10@5V,100MA 200MW 2.5V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA
Rds On (Max) @ Id, Vgs: 10Ohm @ 10mA, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.18 EUR |
| 157+ | 0.11 EUR |
| 256+ | 0.069 EUR |
| BSS84 |
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Hersteller: UMW
Description: 50V 130MA 300MW 10R@5V,100MA 2V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Description: 50V 130MA 300MW 10R@5V,100MA 2V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
auf Bestellung 1028 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.18 EUR |
| 154+ | 0.11 EUR |
| 174+ | 0.1 EUR |
| 207+ | 0.085 EUR |
| 250+ | 0.078 EUR |
| 500+ | 0.073 EUR |
| 1000+ | 0.069 EUR |
| BSS84 |
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Hersteller: EVVO
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
auf Bestellung 4799 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.23 EUR |
| 125+ | 0.14 EUR |
| 205+ | 0.086 EUR |
| 500+ | 0.062 EUR |
| 1000+ | 0.055 EUR |
| BSS84 |
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Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 109+ | 0.16 EUR |
| 177+ | 0.1 EUR |
| 500+ | 0.073 EUR |
| 1000+ | 0.064 EUR |
| BSS84 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
auf Bestellung 18981 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 323+ | 0.22 EUR |
| 548+ | 0.13 EUR |
| 766+ | 0.093 EUR |
| 1000+ | 0.082 EUR |
| 3000+ | 0.068 EUR |
| 6000+ | 0.061 EUR |
| 9000+ | 0.057 EUR |
| 15000+ | 0.054 EUR |
| BSS84 |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 26486 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 390+ | 0.37 EUR |
| 653+ | 0.21 EUR |
| 1255+ | 0.11 EUR |
| 1315+ | 0.098 EUR |
| 1382+ | 0.09 EUR |
| 1454+ | 0.082 EUR |
| 1537+ | 0.074 EUR |
| 3000+ | 0.07 EUR |
| 6000+ | 0.066 EUR |
| BSS84 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 8397 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 290+ | 0.5 EUR |
| 612+ | 0.23 EUR |
| 802+ | 0.17 EUR |
| 1055+ | 0.12 EUR |
| 1194+ | 0.1 EUR |
| 3000+ | 0.062 EUR |
| 6000+ | 0.05 EUR |
| BSS84 |
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Hersteller: onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 13266 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| BSS84 |
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Hersteller: onsemi
MOSFETs SOT-23 P-CH ENHANCE
MOSFETs SOT-23 P-CH ENHANCE
auf Bestellung 261797 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 0.56 EUR |
| 10+ | 0.32 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.11 EUR |
| BSS84 |
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Hersteller: Analog Power Inc.
Description: MOSFET P-CH 50V 0.3A SOT-23
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET P-CH 50V 0.3A SOT-23
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 24+ | 0.75 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.33 EUR |
| BSS84 |
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Hersteller: ONSEMI
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, Oberflächenmontage
tariffCode: 85423990
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 50V
rohsCompliant: YES
Dauer-Drainstrom Id: 130mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 10ohm
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, Oberflächenmontage
tariffCode: 85423990
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 50V
rohsCompliant: YES
Dauer-Drainstrom Id: 130mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 10ohm
auf Bestellung 17038 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BSS84 |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BSS84 |
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Hersteller: ONSEMI
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, Oberflächenmontage
tariffCode: 85423990
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 50V
rohsCompliant: YES
Dauer-Drainstrom Id: 130mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 10ohm
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, Oberflächenmontage
tariffCode: 85423990
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 50V
rohsCompliant: YES
Dauer-Drainstrom Id: 130mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 10ohm
auf Bestellung 17038 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BSS84 |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 50V
rohsCompliant: YES
Dauer-Drainstrom Id: 130mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 10ohm
Description: ONSEMI - BSS84 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 10 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 50V
rohsCompliant: YES
Dauer-Drainstrom Id: 130mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 360mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 10ohm
auf Bestellung 252000 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BSS84 |
![]() |
Hersteller: HT Jinyu Semiconductor
P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
auf Bestellung 114000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6850+ | 0.021 EUR |
| 60000+ | 0.018 EUR |
| BSS84 |
![]() |
Hersteller: Fairchild/ON Semiconductor
P-канальний ПТ, Udss, В = 50, Id = 130 мА, Ptot, Вт = 0,36, Тип монт. = smd, Ciss, пФ @ Uds, В = 73 @ 25, Qg, нКл = 1,3 @ 5 В, Rds = 10 Ом @ 100 мА, 5 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 1 мА,... Транзистори Корпус: SOT-23 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 50, Id = 130 мА, Ptot, Вт = 0,36, Тип монт. = smd, Ciss, пФ @ Uds, В = 73 @ 25, Qg, нКл = 1,3 @ 5 В, Rds = 10 Ом @ 100 мА, 5 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 1 мА,... Транзистори Корпус: SOT-23 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 1475 Stücke:
Im Einkaufswagen
Stück im Wert von UAH












