BSS84AKS Analog Power Inc.
Hersteller: Analog Power Inc.
Description: MOSFET P-CH 60V 0.4A SC70-6
Packaging: Bulk
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
| Anzahl | Privatkunde |
|---|---|
| 13+ | 47.46 EUR |
| 22+ | 5.57 EUR |
| 50+ | 1.62 EUR |
| 100+ | 1.07 EUR |
| 1000+ | 0.51 EUR |
| 3000+ | 0.35 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
13 Stücke
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Produktbewertung abgeben
Technische Details BSS84AKS Analog Power Inc.
Description: MOSFET P-CH 60V 0.4A SC70-6, Packaging: Bulk, Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote BSS84AKS
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AKS0031 | AKYGA SEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.17A; Idm: -1.2A; 0.35W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -170mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 9.9Ω Mounting: SMD Gate charge: 1.77nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -1.2A |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AKS0031 |
|
Hersteller: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.17A; Idm: -1.2A; 0.35W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 9.9Ω
Mounting: SMD
Gate charge: 1.77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -1.2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.17A; Idm: -1.2A; 0.35W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 9.9Ω
Mounting: SMD
Gate charge: 1.77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -1.2A
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)