BSS84AKW,115 Nexperia
auf Bestellung 44700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15152+ | 0.036 EUR |
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Technische Details BSS84AKW,115 Nexperia
Description: MOSFET P-CH 50V 150MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V, Power Dissipation (Max): 260mW (Ta), 830mW (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BSS84AKW,115 nach Preis ab 0.036 EUR bis 0.28 EUR
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BSS84AKW,115 | Hersteller : Nexperia |
 Trans MOSFET P-CH 50V 0.15A 3-Pin SC-70 T/R Automotive AEC-Q101 |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84AKW,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 50V 150MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 20886 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84AKW,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.095A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.35nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12341 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84AKW,115 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.095A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.35nC |
auf Bestellung 12341 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84AKW,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 50V 150MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 20886 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84AKW,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - BSS84AKW,115 - Leistungs-MOSFET, p-Kanal, 50 V, 150 mA, 7.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 150mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 260mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.5ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3683 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84AKW,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - BSS84AKW,115 - Leistungs-MOSFET, p-Kanal, 50 V, 150 mA, 7.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 150mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 260mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.5ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3683 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84AKW,115 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 50V 0.15A Automotive 3-Pin SC-70 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSS84AKW,115 | Hersteller : NXP |
Transistor P-Channel MOSFET; 50V; 20V; 13,5Ohm; 150mA; 310mW; -55°C ~ 150°C; Replacement: BSS84AKW.115; BSS84AKW,115; BSS84AKW; BSS84AKW,115 TBSS84akw Anzahl je Verpackung: 100 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSS84AKW,115 | Hersteller : NXP |
Transistor P-Channel MOSFET; 50V; 20V; 13,5Ohm; 150mA; 310mW; -55°C ~ 150°C; Replacement: BSS84AKW.115; BSS84AKW,115; BSS84AKW; BSS84AKW,115 TBSS84akw Anzahl je Verpackung: 100 Stücke |
auf Bestellung 600 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84AKW,115 | Hersteller : Nexperia |
MOSFETs SOT323 P-CH 50V .15A |
Produkt ist nicht verfügbar |