 
BSS84-PD NextGen Components
 Hersteller: NextGen Components
                                                Hersteller: NextGen ComponentsDescription: MOSFET P-CH -60V -0.17A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 30 V
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 6000+ | 0.1 EUR | 
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Technische Details BSS84-PD NextGen Components
Description: MOSFET P-CH -60V -0.17A SOT23, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA, Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 30 V. 
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