BST50-QX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: BST50-Q/SOT89/MPT3
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Technische Details BST50-QX Nexperia USA Inc.
Description: BST50-Q/SOT89/MPT3, Power - Max: 1.3 W, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: SOT-89, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BST50-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BST50-QX | Hersteller : Nexperia | Darlington Transistors NPN Darlington transistor |
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