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BSV80 NSC

bsv79_80.pdf
Hersteller: NSC

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Technische Details BSV80 NSC

Description: JFET N-CH TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V, Supplier Device Package: TO-18, Drain to Source Voltage (Vdss): 40 V, Power - Max: 350 mW, Resistance - RDS(On): 60 Ohms, Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V.

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BSV80 BSV80 Central Semiconductor Corp bsv79_80.pdf Description: JFET N-CH TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSV80 bsv79_80.pdf
BSV80
Hersteller: Central Semiconductor Corp
Description: JFET N-CH TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH