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BSZ021N04LS6ATMA1

BSZ021N04LS6ATMA1 Infineon Technologies

Infineon-BSZ021N04LS6-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168bd2c15304823
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.03 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ021N04LS6ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 25A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PG-TSDSON-8-34, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V.

Weitere Produktangebote BSZ021N04LS6ATMA1 nach Preis ab 0.95 EUR bis 2.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ021N04LS6ATMA1 BSZ021N04LS6ATMA1 Infineon Technologies Infineon_BSZ021N04LS6_DataSheet_v02_03_EN.pdf MOSFETs TRENCH <= 40V
auf Bestellung 10337 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.02 EUR
10+1.65 EUR
100+1.43 EUR
500+1.31 EUR
1000+1.09 EUR
2500+1.01 EUR
5000+0.95 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ021N04LS6ATMA1 BSZ021N04LS6ATMA1 Infineon Technologies Infineon-BSZ021N04LS6-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168bd2c15304823 Description: MOSFET N-CH 40V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 12035 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
11+1.75 EUR
25+1.65 EUR
100+1.52 EUR
250+1.44 EUR
500+1.38 EUR
1000+1.32 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ021N04LS6ATMA1 Infineon_BSZ021N04LS6_DataSheet_v02_03_EN.pdf
BSZ021N04LS6ATMA1
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
auf Bestellung 10337 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.02 EUR
10+1.65 EUR
100+1.43 EUR
500+1.31 EUR
1000+1.09 EUR
2500+1.01 EUR
5000+0.95 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ021N04LS6ATMA1 Infineon-BSZ021N04LS6-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168bd2c15304823
BSZ021N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 12035 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.04 EUR
11+1.75 EUR
25+1.65 EUR
100+1.52 EUR
250+1.44 EUR
500+1.38 EUR
1000+1.32 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH