BSZ024N04LS6ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 24A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
auf Bestellung 85000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 1.17 EUR |
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Technische Details BSZ024N04LS6ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 24A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V.
Weitere Produktangebote BSZ024N04LS6ATMA1 nach Preis ab 1.23 EUR bis 5.6 EUR
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BSZ024N04LS6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 24A 8-Pin TSDSON EP T/R |
auf Bestellung 200000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ024N04LS6ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 24A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
auf Bestellung 89266 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ024N04LS6ATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH <= 40V |
auf Bestellung 9855 Stücke: Lieferzeit 14-28 Tag (e) |
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BSZ024N04LS6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 24A 8-Pin TSDSON EP T/R |
auf Bestellung 4818 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ024N04LS6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 24A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ024N04LS6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 24A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |