auf Bestellung 28976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.08 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 0.88 EUR |
| 5000+ | 0.84 EUR |
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Technische Details BSZ033NE2LS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 25V 18A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V.
Weitere Produktangebote BSZ033NE2LS5ATMA1 nach Preis ab 0.94 EUR bis 2.22 EUR
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BSZ033NE2LS5ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 25V 18A 8-Pin TSDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ033NE2LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 18A 8-Pin TSDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ033NE2LS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 18A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V |
auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ033NE2LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 18A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ033NE2LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 18A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ033NE2LS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 18A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V |
Produkt ist nicht verfügbar |