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BSZ040N06LS5ATMA1 Infineon Technologies

Name: BSZ040N06LS5ATMA1
Brand: Infineon Technologies
SKU: 147874-4
Price: 1.15 EUR
Availability: InStock

Infineon_BSZ040N06LS5_DataSheet_v02_03_EN-3360960.pdf

Hersteller: Infineon Technologies
MOSFET MV POWER MOS

auf Bestellung 18443 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
2+	2.64 EUR
10+	2.2 EUR
100+	1.75 EUR
500+	1.47 EUR
1000+	1.19 EUR
5000+	1.15 EUR

Mindestbestellmenge: 2

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Technische Details BSZ040N06LS5ATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 36µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V.

Weitere Produktangebote BSZ040N06LS5ATMA1

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
BSZ040N06LS5ATMA1	Hersteller : Infineon Technologies	Description: MOSFET N-CH 60V 40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V	auf Bestellung 22164 Stücke: Lieferzeit 10-14 Tag (e)
BSZ040N06LS5ATMA1	Hersteller : Infineon Technologies	Description: MOSFET N-CH 60V 40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V	auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e)
BSZ040N06LS5ATMA1	Hersteller : Infineon Technologies	Trans MOSFET N-CH 60V 17A 8-Pin TSDSON EP T/R	auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e)