Technische Details BSZ058N03MS G Infineon Technologies
Description: BSZ058N03 - 12V-300V N-CHANNEL P, Supplier Device Package: PG-TSDSON-8, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.
Weitere Produktangebote BSZ058N03MS G nach Preis ab 0.6 EUR bis 0.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|
| BSZ058N03MSG | Infineon Technologies |
 Description: BSZ058N03 - 12V-300V N-CHANNEL PSupplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
auf Bestellung 11233 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSZ058N03MSG | infineon |
08+ |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||
| BSZ058N03MS G | Infineon | QFN |
auf Bestellung 92 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSZ058N03MSG |
|
Hersteller: Infineon Technologies
Description: BSZ058N03 - 12V-300V N-CHANNEL P
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: BSZ058N03 - 12V-300V N-CHANNEL P
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 11233 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 886+ | 0.6 EUR |
| BSZ058N03MSG |
|
Hersteller: infineon
08+
08+
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
| BSZ058N03MS G |
Hersteller: Infineon
QFN
QFN
auf Bestellung 92 Stücke:
Lieferzeit 21-28 Tag (e)