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BSZ060NE2LSATMA1

BSZ060NE2LSATMA1 Infineon Technologies

BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.52 EUR
10000+0.48 EUR
15000+0.46 EUR
25000+0.44 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ060NE2LSATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 12A/44A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V.

Weitere Produktangebote BSZ060NE2LSATMA1 nach Preis ab 0.28 EUR bis 2.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Infineon Technologies Infineon_BSZ060NE2LS_DataSheet_v02_04_EN-3360872.pdf MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS
auf Bestellung 50771 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.65 EUR
10+0.49 EUR
100+0.4 EUR
500+0.33 EUR
2500+0.31 EUR
5000+0.28 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Infineon Technologies BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
auf Bestellung 29786 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
14+1.34 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.56 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ060NE2LSATMA1 Infineon_BSZ060NE2LS_DataSheet_v02_04_EN-3360872.pdf
BSZ060NE2LSATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS
auf Bestellung 50771 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+0.65 EUR
10+0.49 EUR
100+0.4 EUR
500+0.33 EUR
2500+0.31 EUR
5000+0.28 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ060NE2LSATMA1 BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f
BSZ060NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
auf Bestellung 29786 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.15 EUR
14+1.34 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.56 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH