Technische Details BSZ067N06LS3GATMA1 Infineon Technologies
Description: INFINEON - BSZ067N06LS3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 6700 µohm, PG-TSDSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 20A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 3 - 168 Stunden, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.7V, euEccn: NLR, Verlustleistung: 69W, Bauform - Transistor: PG-TSDSON, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 6700µohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote BSZ067N06LS3GATMA1 nach Preis ab 0.84 EUR bis 3.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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BSZ067N06LS3GATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ067N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 14A/79A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ067N06LS3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R |
auf Bestellung 30390 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ067N06LS3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R |
auf Bestellung 10001 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ067N06LS3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3 |
auf Bestellung 8040 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ067N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 14A/79A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V |
auf Bestellung 9614 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ067N06LS3GATMA1 | INFINEON |
Description: INFINEON - BSZ067N06LS3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 6700 µohm, PG-TSDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: PG-TSDSON Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6700µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSZ067N06LS3GATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.96 EUR |
| 10000+ | 0.84 EUR |
| BSZ067N06LS3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A/79A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
Description: MOSFET N-CH 60V 14A/79A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.99 EUR |
| BSZ067N06LS3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
auf Bestellung 30390 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 102+ | 1.71 EUR |
| 109+ | 1.57 EUR |
| 130+ | 1.3 EUR |
| 200+ | 1.2 EUR |
| 1000+ | 1.06 EUR |
| 2000+ | 0.99 EUR |
| 5000+ | 0.95 EUR |
| 10000+ | 0.84 EUR |
| BSZ067N06LS3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
auf Bestellung 10001 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 1.93 EUR |
| 97+ | 1.77 EUR |
| 115+ | 1.46 EUR |
| 200+ | 1.34 EUR |
| 1000+ | 1.2 EUR |
| 2000+ | 1.11 EUR |
| 5000+ | 0.95 EUR |
| BSZ067N06LS3GATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3
MOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3
auf Bestellung 8040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.87 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.11 EUR |
| 2500+ | 1.06 EUR |
| 5000+ | 1.04 EUR |
| BSZ067N06LS3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A/79A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
Description: MOSFET N-CH 60V 14A/79A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
auf Bestellung 9614 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.77 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.18 EUR |
| 2000+ | 1.12 EUR |
| BSZ067N06LS3GATMA1 |
|
Hersteller: INFINEON
Description: INFINEON - BSZ067N06LS3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 6700 µohm, PG-TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: PG-TSDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 6700µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - BSZ067N06LS3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 6700 µohm, PG-TSDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: PG-TSDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 6700µohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)