| Anzahl | Preis |
|---|---|
| 2+ | 2.55 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.14 EUR |
| 2500+ | 1.1 EUR |
| 5000+ | 1.02 EUR |
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Technische Details BSZ0803LSATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TDSON-8 FL, Vgs(th) (Max) @ Id: 2.3V @ 23µA, Power Dissipation (Max): 2.1W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSZ0803LSATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSZ0803LSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 100V 9A/40A TSDSONInput Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 23µA Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSZ0803LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 9A/40A TSDSON Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 23µA Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSZ0803LSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ0803LSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH