BSZ0909NDXTMA1 Infineon Technologies
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 456+ | 1.22 EUR |
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Technische Details BSZ0909NDXTMA1 Infineon Technologies
Description: MOSFET 2N-CH 30V 20A WISON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 17W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V, Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-WISON-8.
Weitere Produktangebote BSZ0909NDXTMA1 nach Preis ab 1.22 EUR bis 2.69 EUR
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BSZ0909NDXTMA1 | Hersteller : Infineon Technologies |
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BSZ0909NDXTMA1 | Hersteller : Infineon Technologies |
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BSZ0909NDXTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 20A WISON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WISON-8 |
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