BSZ0910NDXTMA1 Infineon Technologies

Description: DIFFERENTIATED MOSFETS, Part Status: Obsolete, Supplier Device Package: PG-WISON-8, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.9W (Ta), 31W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).