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BSZ0910NDXTMA1

BSZ0910NDXTMA1 Infineon Technologies


Infineon-BSZ0910ND-DS-v02_00-EN-1276074.pdf Hersteller: Infineon Technologies
MOSFET TRENCH <= 40V
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Technische Details BSZ0910NDXTMA1 Infineon Technologies

Description: DIFFERENTIATED MOSFETS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W (Ta), 31W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-WISON-8, Part Status: Obsolete.

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BSZ0910NDXTMA1 BSZ0910NDXTMA1 Hersteller : Infineon Technologies 13infineon-bsz0910nd-ds-v02_00-en.pdffileid5546d462602a9dc801605477.pdf Trans MOSFET N-CH 30V 11.1A 8-Pin WISON EP T/R
Produkt ist nicht verfügbar
BSZ0910NDXTMA1 BSZ0910NDXTMA1 Hersteller : Infineon Technologies Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4 Description: DIFFERENTIATED MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
Part Status: Obsolete
Produkt ist nicht verfügbar
BSZ0910NDXTMA1 BSZ0910NDXTMA1 Hersteller : Infineon Technologies Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4 Description: DIFFERENTIATED MOSFETS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
Part Status: Obsolete
Produkt ist nicht verfügbar