| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.57 EUR |
| 5000+ | 0.5 EUR |
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Technische Details BSZ0994NSATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 13A 8TSDSON-25, Part Status: Active, Supplier Device Package: PG-TSDSON-8-25, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.1W (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote BSZ0994NSATMA1 nach Preis ab 0.63 EUR bis 2.37 EUR
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BSZ0994NSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 13A 8TSDSON-25Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V |
auf Bestellung 4962 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSZ0994NSATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8TSDSON-25
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 13A 8TSDSON-25
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.37 EUR |
| 15+ | 1.49 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.63 EUR |