BSZ099N06LS5ATMA1
Produktcode: 165964
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Weitere Produktangebote BSZ099N06LS5ATMA1 nach Preis ab 0.49 EUR bis 2.89 EUR
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BSZ099N06LS5ATMA1 | Infineon Technologies |
MOSFETs TRENCH 40<-<100V |
auf Bestellung 27774 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ099N06LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 46A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
auf Bestellung 1893 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSZ099N06LS5ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH 40<-<100V
MOSFETs TRENCH 40<-<100V
auf Bestellung 27774 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.61 EUR |
| 10+ | 1.04 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.57 EUR |
| 2500+ | 0.56 EUR |
| 5000+ | 0.49 EUR |
| BSZ099N06LS5ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 1893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.22 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.87 EUR |