BSZ100N03LSGATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 4186 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 1.28 EUR |
| 16+ | 1.11 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.55 EUR |
| 2000+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSZ100N03LSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TSDSON-8, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V.
Weitere Produktangebote BSZ100N03LSGATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
BSZ100N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
BSZ100N03LSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
BSZ100N03LSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 12A/40A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TSDSON-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
Produkt ist nicht verfügbar |
|
|
|
BSZ100N03LSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |