BSZ120P03NS3EGATMA1 Infineon Technologies

Description: MOSFET P-CH 30V 11A/40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3.1V @ 73µA, Supplier Device Package: PG-TSDSON-8, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 15 V.