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BSZ42DN25NS3GATMA1

BSZ42DN25NS3GATMA1 Infineon Technologies

BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TSDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-2
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.71 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ42DN25NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 250V 5A TSDSON-8, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TSDSON-8-2, Vgs(th) (Max) @ Id: 4V @ 13µA, Power Dissipation (Max): 33.8W (Tc), Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote BSZ42DN25NS3GATMA1 nach Preis ab 0.78 EUR bis 2.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 Infineon Technologies BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b Description: MOSFET N-CH 250V 5A TSDSON-8
Part Status: Active
Supplier Device Package: PG-TSDSON-8-2
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 10958 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
15+1.24 EUR
100+0.98 EUR
500+0.92 EUR
1000+0.84 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 Infineon Technologies Infineon_BSZ42DN25NS3_G_DS_v02_04_EN.pdf MOSFETs N-Ch 250V 5A TDSON-8 OptiMOS 3
auf Bestellung 13057 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.43 EUR
10+1.49 EUR
100+1.05 EUR
500+0.9 EUR
1000+0.81 EUR
5000+0.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ42DN25NS3GATMA1 Infineon Technologies Infineon-BSZ42DN25NS3.pdf N-канальний ПТ, Udss, В = 250, Id = 5 А, Ciss, пФ @ Uds, В = 430 @ 100, Qg, нКл = 5,5 @ 10 В, Rds = 425 мОм @ 2,5 A, 10 В, Ugs(th) = 4 В @ 13 мкА, Р, Вт = 33,8, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: PG-TSDSON-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 5 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
BSZ42DN25NS3GATMA1 BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b
BSZ42DN25NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TSDSON-8
Part Status: Active
Supplier Device Package: PG-TSDSON-8-2
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 10958 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.87 EUR
15+1.24 EUR
100+0.98 EUR
500+0.92 EUR
1000+0.84 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ42DN25NS3GATMA1 Infineon_BSZ42DN25NS3_G_DS_v02_04_EN.pdf
BSZ42DN25NS3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 250V 5A TDSON-8 OptiMOS 3
auf Bestellung 13057 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.43 EUR
10+1.49 EUR
100+1.05 EUR
500+0.9 EUR
1000+0.81 EUR
5000+0.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ42DN25NS3GATMA1 Infineon-BSZ42DN25NS3.pdf
Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 250, Id = 5 А, Ciss, пФ @ Uds, В = 430 @ 100, Qg, нКл = 5,5 @ 10 В, Rds = 425 мОм @ 2,5 A, 10 В, Ugs(th) = 4 В @ 13 мкА, Р, Вт = 33,8, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: PG-TSDSON-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 5 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH