BTS114A E3045A Infineon Technologies
Hersteller: Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 94+ | 5.44 EUR |
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Technische Details BTS114A E3045A Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V, Power Dissipation (Max): 50W, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: PG-TO220-3-5, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Weitere Produktangebote BTS114A E3045A nach Preis ab 4.36 EUR bis 5.62 EUR
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BTS114AE3045A | Hersteller : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO220-3-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 10937 Stücke: Lieferzeit 10-14 Tag (e) |
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| BTS114AE3045A | Hersteller : Infineon Technologies |
BTS114AE3045A |
auf Bestellung 576 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTS114AE3045A | Hersteller : Infineon Technologies |
BTS114AE3045A |
auf Bestellung 10361 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTS114AE3045A | Hersteller : Infineon Technologies |
BTS114AE3045A |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTS114AE3045A | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BTS114AE3045A - BTS114 POWER FIELD-EFFECT TRANSISTOR, 1 tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 10937 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTS114A E3045A | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BTS114A E3045A - BTS114 POWER FIELD-EFFECT TRANSISTOR, 1 tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS114A E3045A | Hersteller : Infineon Technologies |
MOSFETs N-Ch 50V 44A D2PAK-2 |
Produkt ist nicht verfügbar |