BTS132E3129NKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: BTS132 - N-CHANNEL TEMPFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 23500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 7.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BTS132E3129NKSA1 Infineon Technologies
Description: BTS132 - N-CHANNEL TEMPFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V, Power Dissipation (Max): 75W, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote BTS132E3129NKSA1 nach Preis ab 8.02 EUR bis 8.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
BTS132E3129NKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 24A 3-Pin(3+Tab) TO-220AB T/R |
auf Bestellung 23500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
BTS132E3129NKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 24A 3-Pin(3+Tab) TO-220AB T/R |
Produkt ist nicht verfügbar |