BTS240AHKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 50V 58A Automotive AEC-Q101 3-Pin(3+Tab) TO-218 Tube
| Anzahl | Privatkunde |
|---|---|
| 26+ | 25.13 EUR |
| 100+ | 23.53 EUR |
| 500+ | 21.8 EUR |
| 1000+ | 20.15 EUR |
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Technische Details BTS240AHKSA1 Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO218-3-1, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 170W, Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-218-3, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BTS240AHKSA1 nach Preis ab 25.38 EUR bis 29.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| BTS240AHKSA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO218-3-1 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 170W Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Packaging: Bulk Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 12772 Stücke: Lieferzeit 10-14 Tag (e) |
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| BTS240AHKSA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BTS240AHKSA1 - BTS240 POWER FIELD-EFFECT TRANSISTOR, 5 tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 12772 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BTS240AHKSA1 |
|
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO218-3-1
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 170W
Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO218-3-1
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 170W
Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 12772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 25.38 EUR |
| BTS240AHKSA1 |
|
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BTS240AHKSA1 - BTS240 POWER FIELD-EFFECT TRANSISTOR, 5
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - BTS240AHKSA1 - BTS240 POWER FIELD-EFFECT TRANSISTOR, 5
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 12772 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 29.44 EUR |