BTS240AHKSA1 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO218-3-1, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 170W, Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-218-3, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive.