BTS247ZE3062ANTMA1 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-5-2, Vgs(th) (Max) @ Id: 2V @ 90µA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB, Packaging: Bulk.