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BTS3125EJ Infineon / IR

Infineon_BTS3125EJ_DS_v01_00_EN.pdf
Hersteller: Infineon / IR
Power Switch ICs - Power Distribution HITFET
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Technische Details BTS3125EJ Infineon / IR

Category: Power switches - integrated circuits, Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP, Operating temperature: -40...150°C, Output current: 2A, Type of integrated circuit: power switch, Kind of output: N-Channel, Technology: HITFET®, Turn-on time: 115µs, Output voltage: 40V, Case: SO8-EP, Turn-off time: 210µs, Kind of integrated circuit: low-side, Number of channels: 1, On-state resistance: 0.25Ω, Mounting: SMD.

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BTS3125EJ BTS3125EJ INFINEON TECHNOLOGIES BTS3125EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Operating temperature: -40...150°C
Output current: 2A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: SO8-EP
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.25Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3125EJ BTS3125EJ.pdf
BTS3125EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Operating temperature: -40...150°C
Output current: 2A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: SO8-EP
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.25Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH