BU2008-E3/51 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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Technische Details BU2008-E3/51 Vishay General Semiconductor - Diodes Division
Category: Flat single phase diode bridge rectif., Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A, Type of bridge rectifier: single-phase, Max. off-state voltage: 0.8kV, Load current: 20A, Max. forward impulse current: 0.24kA, Version: flat, Case: BU, Electrical mounting: THT, Leads: flat pin, Kind of package: in-tray, Max. forward voltage: 0.95V, Features of semiconductor devices: glass passivated, Technology: isoCink+™.
Weitere Produktangebote BU2008-E3/51
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BU2008-E3/51 | Hersteller : Vishay General Semiconductor |
Bridge Rectifiers 20 Amp 800 Volt |
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BU2008-E3\51 | Hersteller : Vishay Semiconductors | Bridge Rectifiers 20A,800V,GPP,POWERBRIDGERECT |
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| BU2008-E3/51 | Hersteller : VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 20A Max. forward impulse current: 0.24kA Version: flat Case: BU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated Technology: isoCink+™ |
Produkt ist nicht verfügbar |