BUJ100LR,126 WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: TRANS NPN 400V 1A TO-92-3
Power - Max: 2.1 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 750mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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Technische Details BUJ100LR,126 WeEn Semiconductors
Description: TRANS NPN 400V 1A TO-92-3, Power - Max: 2.1 W, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 750mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote BUJ100LR,126
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUJ100LR,126 | Hersteller : WeEn Semiconductors |
Bipolar Transistors - BJT Trans GP BJT NPN 400V 1A 3-Pin |
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