BUJD203A,127 NXP USA Inc.
Hersteller: NXP USA Inc.Description: TRANS NPN 425V 4A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Power - Max: 80 W
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 908+ | 0.55 EUR |
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Technische Details BUJD203A,127 NXP USA Inc.
Description: TRANS NPN 425V 4A TO-220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 425 V, Power - Max: 80 W.
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BUJD203A,127 | Hersteller : WeEn Semiconductors |
Description: TRANS NPN 425V 4A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 425 V Power - Max: 80 W |
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| BUJD203A,127 | Hersteller : WeEn Semiconductors |
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