Technische Details BUJD203AD,118 WeEn Semiconductors
Description: TRANS NPN 425V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 425 V, Power - Max: 80 W.
Weitere Produktangebote BUJD203AD,118
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BUJD203AD,118 | Hersteller : WeEn Semiconductors |
 Description: TRANS NPN 425V 4A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 425 V Power - Max: 80 W |
Produkt ist nicht verfügbar |
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BUJD203AD,118 | Hersteller : WeEn Semiconductors |
Description: TRANS NPN 425V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 425 V Power - Max: 80 W |
Produkt ist nicht verfügbar |
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BUJD203AD,118 | Hersteller : WeEn Semiconductors |
Bipolar Transistors - BJT NPN 425 V 4 A |
Produkt ist nicht verfügbar |