BUK4D38-20PH NEXPERIA
Hersteller: NEXPERIA
Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.3V
euEccn: NLR
Verlustleistung: 19W
Bauform - Transistor: DFN2020MD
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchMOS Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: No SVHC (14-Jun-2023)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 1.3 EUR |
| 236+ | 0.99 EUR |
| 345+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.39 EUR |
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Technische Details BUK4D38-20PH NEXPERIA
Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 18A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.3V, euEccn: NLR, Verlustleistung: 19W, Bauform - Transistor: DFN2020MD, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchMOS Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.03ohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote BUK4D38-20PH nach Preis ab 0.39 EUR bis 1.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BUK4D38-20PH | NEXPERIA |
Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, OberflächenmontagetariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK4D38-20PH | Nexperia USA Inc. |
Description: SMALL SIGNAL MOSFETS FOR AUTOMOTQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 2W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 1905 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK4D38-20PH |
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Hersteller: NEXPERIA
Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 1.3 EUR |
| 236+ | 0.99 EUR |
| 345+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.39 EUR |
| BUK4D38-20PH |
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Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFETS FOR AUTOMOT
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: SMALL SIGNAL MOSFETS FOR AUTOMOT
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 24+ | 0.89 EUR |
| 50+ | 0.65 EUR |
| 100+ | 0.57 EUR |


