| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.4 EUR |
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Technische Details BUK4D38-20PH Nexperia
Description: SMALL SIGNAL MOSFETS FOR AUTOMOT, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 2W (Ta), 19W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK4D38-20PH nach Preis ab 0.48 EUR bis 1.21 EUR
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BUK4D38-20PH | Hersteller : Nexperia USA Inc. |
 Description: SMALL SIGNAL MOSFETS FOR AUTOMOTQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 2W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 1905 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D38-20PH | Hersteller : Nexperia USA Inc. |
Description: SMALL SIGNAL MOSFETS FOR AUTOMOT Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 2W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |