BUK4D38-20PH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFETS FOR AUTOMOT
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: SMALL SIGNAL MOSFETS FOR AUTOMOT
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5935 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
30+ | 0.88 EUR |
100+ | 0.61 EUR |
500+ | 0.48 EUR |
1000+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK4D38-20PH Nexperia USA Inc.
Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 18A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.3V, euEccn: NLR, Verlustleistung: 19W, Bauform - Transistor: DFN2020MD, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchMOS Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.03ohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote BUK4D38-20PH nach Preis ab 0.32 EUR bis 1.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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BUK4D38-20PH | Hersteller : Nexperia | MOSFET MOSFET BUK4D38-20P/SOT1220 |
auf Bestellung 4420 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK4D38-20PH | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Anzahl der Pins: 6Pin(s) Produktpalette: TrenchMOS Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK4D38-20PH | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK4D38-20PH | Hersteller : Nexperia USA Inc. |
Description: SMALL SIGNAL MOSFETS FOR AUTOMOT Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
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