BUK4D38-20PX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: SMALL SIGNAL MOSFET FOR AUTOMOTI
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
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Technische Details BUK4D38-20PX Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR AUTOMOTI, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V, Power Dissipation (Max): 2W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK4D38-20PX nach Preis ab 0.22 EUR bis 0.82 EUR
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BUK4D38-20PX | Hersteller : Nexperia |
MOSFETs BUK4D38-20P/SOT1220/SOT1220 |
auf Bestellung 1794 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D38-20PX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK4D38-20PX - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.026 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK4D38-20PX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK4D38-20PX - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.026 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK4D38-20PX | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -72A Drain-source voltage: -20V Drain current: -11A Gate charge: 16nC On-state resistance: 64mΩ Power dissipation: 19W Gate-source voltage: ±12V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK4D38-20PX | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -72A Drain-source voltage: -20V Drain current: -11A Gate charge: 16nC On-state resistance: 64mΩ Power dissipation: 19W Gate-source voltage: ±12V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK4D38-20PX | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 6A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |