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BUK6607-75C,118

BUK6607-75C,118 Nexperia


BUK6607-75C-1320025.pdf
Hersteller: Nexperia
MOSFET N-CHAN 75V 100A
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Technische Details BUK6607-75C,118 Nexperia

Description: MOSFET N-CH 75V 100A D2PAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 204W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

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BUK6607-75C,118 BUK6607-75C,118 Hersteller : Nexperia USA Inc. BUK6607-75C.pdf Description: MOSFET N-CH 75V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6607-75C,118 BUK6607-75C,118 Hersteller : Nexperia USA Inc. BUK6607-75C.pdf Description: MOSFET N-CH 75V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH