BUK661R9-40C,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
| Anzahl | Preis |
|---|---|
| 3+ | 5.95 EUR |
| 10+ | 4.11 EUR |
| 100+ | 3.02 EUR |
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Technische Details BUK661R9-40C,118 Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 306W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK661R9-40C,118
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BUK661R9-40C,118 | Hersteller : Nexperia |
MOSFET N-CHAN 40V 120A |
auf Bestellung 1092 Stücke: Lieferzeit 10-14 Tag (e) |