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BUK6D210-60EX

BUK6D210-60EX Nexperia USA Inc.

BUK6D210-60E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BUK6D210-60EX Nexperia USA Inc.

Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V, Power Dissipation (Max): 2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote BUK6D210-60EX nach Preis ab 0.15 EUR bis 0.77 EUR

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BUK6D210-60EX BUK6D210-60EX Hersteller : Nexperia USA Inc. BUK6D210-60E.pdf Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
36+0.50 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D210-60EX BUK6D210-60EX Hersteller : Nexperia BUK6D210-60E.pdf MOSFETs BUK6D210-60E/SOT1220/SOT1220
auf Bestellung 5152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.50 EUR
100+0.25 EUR
1000+0.22 EUR
3000+0.16 EUR
9000+0.15 EUR
Mindestbestellmenge: 4
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BUK6D210-60EX BUK6D210-60EX Hersteller : NEXPERIA buk6d210-60e.pdf 60 V, N-channel Trench MOSFET
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
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BUK6D210-60EX BUK6D210-60EX Hersteller : Nexperia buk6d210-60e.pdf 60 V, N-channel Trench MOSFET Automotive AEC-Q101
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BUK6D210-60EX Hersteller : NEXPERIA BUK6D210-60E.pdf BUK6D210-60EX SMD N channel transistors
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